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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 2)
W DSS
I AR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V DD = 50 V, I D =2.6 A
90
2.6
mJ
A
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSSF
I GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V DS = 80 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
V GS = –20 V, V DS = 0 V
100
99
10
100
–100
V
mV/ ° C
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
I D(on)
g FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On Resistance
On–State Drain Current
Forward Transconductance
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V GS = 10 V, I D = 2.6 A
V GS = 6.0 V, I D = 2.5 A
V GS = 10 V, I D = 2.6 A;T J = 125 ° C
V GS = 10 V,
V DS = 5 V
V DS = 10 V, I D = 2.6 A
2
10
2.3
–6
86
91
157
10
4
125
135
240
V
mV/ ° C
m ?
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 50 V,
f = 1.0 MHz
V GS = 0 V,
660
55
40
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 50 V,
V GS = 10 V,
V DS = 50 V,
V GS = 10 V
I D = 1 A,
R GEN = 6 ?
I D = 2.6 A,
6
3.5
23
3.7
14
2.3
11
7
37
7.4
20
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
3.6
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
1.3
A
V SD
t rr
Q rr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V GS = 0 V, I S = 1.3 A
I F = 2.6 A
d iF /d t = 100 A/μs
(Note 2)
(Note 2)
0.76
31
56
1.2
V
nS
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
78°C/W when mounted on a 1in pad of 2oz copper on FR-4 board.
a.
b.
2
156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDC3612 Rev B 4
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